elektronische bauelemente ssd30n10-50d 20a, 100v, r ds(on) 50m ? n-ch enhancement mode power mosfet 24-may-2013 rev. b page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. to-252(d-pack) a c d n o p g e f h k j m b rohs compliant product a suffix of ?-c? specifies halogen free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. features ? low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe to-252 saves board space ? fast switching speed ? high performance trench technology application dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. package information package mpq leadersize to-252 2.5k 13? inch absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v continuous drain current 1 t c =25 i d 20 a pulsed drain current 2 i dm 36 a continuous source current (diode conduction) 1 i s 30 a power dissipation 1 t c =25 p d 50 w operating junction and storage temperature range t j , t stg -55 ~ 175 c thermal resistance ratings maximum thermal resistance junction-ambient 1 r ja 50 c / w maximum thermal resistance junction-case r jc 3.0 c / w notes: 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature. millimete r millimete r ref. min. max. ref. min. max. a 6.4 6.8 j 2.30 ref. b 5.20 5.50 k 0.70 0.90 c 2.20 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1.6 e 6.8 7.3 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g 5.40 6.2 h 0.8 1.20 ? ? gate ? ? source ? ? drain
elektronische bauelemente ssd30n10-50d 20a, 100v, r ds(on) 50m ? n-ch enhancement mode power mosfet 24-may-2013 rev. b page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions static gate-source threshold voltage v gs(th) 1.0 - - v v ds =v gs , i d =250 a gate-body leakage i gss - - 100 na v ds =0, v gs =20v - - 1 v ds =80v, v gs =0 zero gate voltage drain current i dss - - 25 a v ds =80v, v gs =0, t j =55c on-state drain current 1 i d(on) 34 - - a v ds =5v, v gs =10v - - 50 v gs =10v, i d =9.2a drain-source on-resistance 1 r ds(on) - - 59 m ? v gs =4.5v, i d =6.1a forward transconductance 1 g fs - 4.4 - s v ds =40v, i d =5.5a diode forward voltage v sd - 1.1 - v i s =9a, v gs =0 dynamic 2 total gate charge q g - 25 - gate-source charge q gs - 5 - gate-drain change q gd - 19 - nc i d = 9 a v ds = 25 v v gs = 10 v turn-on delay time t d(on) - 9 - rise time t r - 15 - turn-off delay time t d(off) - 45 - fall time t f - 39 - ns v dd =100v i d = 9a r l = 25 ? v gen = 10v notes: 1. pulse test pw Q 300 us duty cycle Q 2 . 2. guaranteed by design, not subject to production testing.
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